dpls160v low v ce(sat) pnp surface mount transistor features ? epitaxial planar die construction ? complementary npn type available (dnls160v) ? surface mount package suited for automated assembly ? ultra small surface mount package ? lead free/rohs compliant (note 1) ? "green device" (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.003 grams (approximate) ds31251 rev. 3 - 2 1 of 4 www.diodes.com dpls160v ? diodes incorporated new product sot-563 123 654 1, 2, 5, 6 3 4 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current - continuous i c -1 a peak pulse collector current i cm -2 a base current (dc) i b -300 ma thermal characteristics characteristic symbol value unit p d 300 mw power dissipation (note 3) @ t a = 25 c r ja 417 c/w thermal resistance, junction to ambient (note 3) @ t a = 25 c operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http:// www.di odes.com/products/lead_f ree/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as s hown on page 4 or in diodes inc. suggested pad layout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf.
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage -80 v (br)cbo ? ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 ? ? v i e = -100 a, i c = 0 collector cutoff current i cbo ds31251 rev. 3 - 2 2 of 4 www.diodes.com dpls160v ? diodes incorporated new product ? ? -100 -50 na a v cb = -60v, i e = 0 v cb = -60v, i e = 0, t a = 150c collector cutoff current i ces ? ? -100 na v ce = -60v, v be = 0 emitter cutoff current i ebo ? ? -100 na v eb = -5v, i c = 0 on characteristics (note 4) 200 150 100 dc current gain h fe 325 250 180 ? ? ? v v ce = -5v, i c = -1ma v ce = -5v, i c = -500ma v ce = -5v, i c = -1a collector-emitter saturation voltage v ce(sat) ? ? ? -90 -90 -160 -160 -175 -330 mv i c = -100ma, i b = -1ma i c = -500ma, i b = -50ma i c = -1a, i b = -100ma collector-emitter saturation resistance r ce(sat) ? 160 330 m ? i c = -1a, i b = -100ma base-emitter saturation voltage v be(sat) ? -0.95 -1.1 v i c = -1a, i b = -50ma base-emitter turn on voltage v be(on) ? -0.82 -0.9 v v ce = -5v, i c = -1a small signal characteristics output capacitance c obo ? 10 15 pf v cb = -10v, f = 1.0mhz current gain-bandwidth product f t 150 220 ? mhz v ce = -10v, i c = -50ma, f = 100mhz switching characteristics turn-on time t on ? 36 ? ns delay time t d ? 12 ? ns rise time t r ? 24 ? ns turn-off time t off ? 163 ? ns storage time t s ? 132 ? ns fall time t f ? 31 ? ns v cc = -10v i c = -0.5a, i b1 = i b2 = -25ma notes: 4. measured under puls ed conditions. pulse width = 300 s. duty cycle 2%. 0 0.3 0.6 0.9 1.2 1.5 01234 -v , collector-emitter voltage (v) ce -i , 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 maximum power dissipation vs. ambient temperature a 150 200 250 300 350 400 0 5 c o lle c t o r c u r r e n t (a) c fig. 2 typical collector current vs. collector-emitter voltage i = -2ma b i = -4ma b i = -6ma b i = -8ma b i = -10ma b
0 200 400 600 0.001 0.01 0.1 1 10 -i , collector current (a) c h, d c c u r r e n t g ai n fe fig. 3 typical dc current gain vs. collector current 0 0.1 0.2 0.3 0.4 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , collector emitter saturation voltage (v) ce(sat) new product 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base emitter turn-on voltage (v) be(on) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) fig. 6 typical base-emitter saturation voltage vs. collector current t = 85c a t = 150c a t = 25c a t = -55c a i/i = 20 cb 0 20 40 60 80 100 120 0.01 0.1 1 10 100 v , reverse voltage (v) r capacitance (pf) fig. 7 typical total capacitance f = 1mhz c ibo c obo 0 50 100 150 200 250 010 2030405060708090100 i , collector current (ma) c f , current gain-bandwidth product (mhz) t fig. 8 typical gain-bandwidth product vs. collector current v = -10v f = 100mhz ce ds31251 rev. 3 - 2 3 of 4 www.diodes.com dpls160v ? diodes incorporated
ds31251 rev. 3 - 2 4 of 4 www.diodes.com dpls160v ? diodes incorporated ordering information (note 5) device p ackaging shipping DPLS160V-7 sot-563 3000/tape & reel n otes: 5. for packaging details, go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information new product pk1 = product type markin ym = date code markin y = year ex: v = 2008 m g code g = month ex: 9 = september date code key 2008 2009 2010 2011 2012 2013 2014 2015 pk1 ym year code v w x y z a b c jan f mar a may j j a sep o nov dec month eb pr un ul ug ct code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout (in mm) important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use an d will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. a m sot-563 l b c h k g d dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm 0.375 2.2 0.5 1.7 0.5 0.5 1.2
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